ABOUT USHistory
2010
- 10
Open Global Newsroom to Strengthen Communication
Develops 1Znm 16Gb DDR4 DRAM - 08
Develops World's Fastest High Bandwidth Memory, HBM2E
Unveils "Gold S31" Consumer Solid-State Drive on Amazon - 06
Starts Mass-Producing World's First 128-ayer 4D NAND
- 05
Shipped samples of 96-layer 1Tb QLC 4D NAND
- 04
Completed expanded fab (C2F) in Wuxi, China
- 03
Announced KRW 1.2 trillion support plans for mutual growth at the “Semiconductor Cluster”
Demonstrated industry’s first ZNS-based SSD solution for next-gen data centers - 02
A Special Purpose Company (SPC) submitted an Investment Letter of Intent for a “Semiconductor Cluster” to Yongin city government
- 12
Broke ground for M16 at its headquarters in Icheon
Appointed Dr. Seok-hee Lee as the new Chief Executive Officer - 11
Developed 1Ynm 16Gb DDR5 DRAM
Developed 1Ynm 8Gb DDR4 DRAM
Launched the world’s first ‘96-layer CTF-based 4D NAND Flash’ - 10
Introduced a new slogan “We Do Technology”
Held a ceremony celebrating the completion of M15 in Cheongju
- 07
Announced a construction plan of a new semiconductor fabrication plant in Icheon
- 06
Completed procedure to take over Toshiba Memory through consortium between Korea, America and Japan
- 05
Completion of Happy More, ‘Subsidiary Standard Workplace for People with Disabilities’
- 03
Introduction of outside director system and establishment of continuous management commission within the board of directors
- 02
Development of 4th generation (72 phase) 3D NAND-based 4TByte SATA SSD for business use
Started 4th generation (72 phase) NAND-based next generation PCIe eSSD customer certification
- 10
Operated “SK hynix Industrial Health Advancement Continuation Committee”
- 09
Presented construction plan for the Icheon Campus Research and Development Center
Investment decision for Toshiba Memory - 07
Established ‘SK hynix System IC’, which is a subsidiary specializing in foundry
- 04
Introduced Industry’s Fastest 8Gb Graphics DRAM(GDDR6)
Introduced Industry’s Highest 72-Layer 3D NAND Flash - 01
Launched the World’s First Highest Density of 8GB LPDDR4X
- 12
Announced Construction of a Cutting Edge NAND Flash FAB in Cheongju
- 10
Entered into an Agreement with Stanford University to R&D ‘Artificial Neural Network Devices’
Joined the Nation's First 'Platinum Club' of CDP's the Best Honor
- 08
MOU for an Establishment of ‘Subsidiary Typed Standard Workplace’ with KEAD
- 02
Launched a Handball Team ‘SK Hawks’
- 08
Established M14 Line in Icheon
Expanded IP and Commercial Relationship with SanDisk - 06
Introduced Industry's First Model of Wage Sharing with Biz. Partners
- 02
the World’s First Commercialization of 8Gb LPDDR4
- 01
Announced All-Time High Financial Results for FY2014
- 12
Signed a MOU for Joint Development of Nano Imprint Lithography with Toshiba
- 10
Developed the World’s First 16GB NVDIMM
- 09
Established a back-end Line in Chongqing, Sichuan Province, China
Listed on the DJSI World for 5 Consecutive Years
Developed the World’s First Wide IO2 Mobile DRAM
- 06
Acquired Firmware Division of Softeq Development FLLC.
- 05
Acquired PCIe Card Division of Violin Memory
- 04
Developed the World's First 128GB DDR4 Module
- 12
Developed the World's First 20nm Class LPDDR4
Developed the World's First TSV-based HBM - 11
Established mass production system of 16nm NAND Flash
- 10
Developed the World’s First 20nm Class 6Gb LPDDR3
- 08
Opened an Integrated Analysis Center
- 07
Signed a Cross License Agreement with Samsung Electronics Co.
- 06
Signed a Patent License Agreement with Rambus
Developed the World’s First High Density 8Gb LPDDR3 - 02
Appointed Dr. Sung Wook Park as the new Chief Executive Officer
- 09
Developed Low-Voltage 4Gb Graphics DDR3
Launched the Flash Solution Design Center - 06
Established M12 Line in Cheongju
Launched Client-side SSD
Acquired Link_A_Media Devices
Acquired Ideaflash S.r.l. and Established a Flash R&D Center in Europe
Signed Joint Development for PCRAM with IBM
- 04
Signed a Strategic Alliance with Spansion
- 03
Changed the Company name to 'SK hynix Inc.'
- 02
SK Telecom becomes Hynix’s largest shareholder
Appointed Mr. Tae-won Chey as the new Chairman & Chief Executive Office
Appointed Mr. Sung Min Ha as the Chairman of Board of Directors
- 11
SK Telecom Signed the Share Purchase Agreement with the Hynix Share Management Council
- 07
Signed Joint Development for MRAM with Toshiba
- 06
Appointed Mr. In-Baik Jeon as the Chairman of BOD
- 04
Developed 30nm Class 2Gb high performance DDR4 DRAM
- 03
Developed 40nm Class 16Gb DDR3 DRAM using TSV technology
- 09
Named to Dow Jones Sustainability World Index
Signed a joint development agreement with HP on Next Generation Memory Products, ReRAM - 06
Completed construction of a back-end joint venture, HITECH Semiconductor Package & Test, in China
- 03
Appointed Mr. Oh Chul Kwon as the new Chief Executive Officer
- 02
Developed 20nm Class 64Gb NAND Flash
- 01
Developed the World’s First 40nm Class 2Gb Mobile Low Power DDR2 DRAM
